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| SemiWell Semiconductor SBL13003 High Voltage Fast-Switching NPN Power Transistor Features - Very High Switching Speed (Typical 120ns@1.0A) - Minimum Lot-to-Lot hFE Variation - Low VCE(sat) (Typical 200mV@1.0A/0.25A) - Wide Reverse Bias S.O.A Symbol 2.Collector 1.Base 3.Emitter General Description This devices is designed for high voltage, high speed switching characteristic required such as lighting system, switching regulator, inverter and deflection circuit. TO-92L 1 2 3 Absolute Maximum Ratings Symbol VCES VCEO VEBO IC ICM IB IBM PC TSTG TJ Parameter Collector-Emitter Voltage ( VBE = 0 ) Collector-Emitter Voltage ( IB = 0 ) Emitter-Base Voltage ( IC = 0 ) Collector Current Collector Peak Current ( tP 5 ms ) Base Current Base Peak Current ( tP 5 ms ) Total Dissipation at TA = 25 C Storage Temperature Max. Operating Junction Temperature Value 700 400 9.0 1.5 3.0 0.75 1.5 1.5 - 65 ~ 150 150 Units V V V A A A A W C C Thermal Characteristics Symbol RJA Parameter Thermal Resistance, Junction-to-Ambient Value 83 Units C/W Oct, 2002. Rev. 2 Copyright@SemiWell Semiconductor Co., Ltd., All rights reserved 1/5 SBL13003 Electrical Characteristics Symbol ICEV VCEO(sus) ( TC = 25 C unless otherwise noted ) Parameter Collector Cut-off Current ( VBE = - 1.5V ) Collector-Emitter Sustaining Voltage ( IB = 0 ) Condition VCE = 700V VCE = 700V IC = 10 mA IC = 0.5A IC = 1.0A IC = 1.5A IC = 0.5A IC = 1.0A IC = 0.5A IC = 1.0A IC = 1.0A IB1 = 0.2A TP = 25 VCC = 15V IB1 = 0.2A L = 0.35mH VCC = 15V IB1 = 0.2A L = 0.35mH IC = 1.0A IB2 = -0.5A Vclamp = 300V IC = 1.0A IB2 = -0.5A Vclamp = 300V TC = 100 C IB = 0.1A IB = 0.25A IB = 0.5A IB = 0.1A IB = 0.25A VCE = 2V VCE = 2V VCC = 125V IB2 = - 0.2A TC = 100 C Min - Typ - Max 1.0 5.0 - Units mA 400 - V VCE(sat) Collector-Emitter Saturation Voltage - - 0.3 0.5 1.0 1.0 1.2 30 25 V VBE(sat) Base-Emitter Saturation Voltage - - V hFE DC Current Gain Resistive Load Turn-On Time Storage Time Fall Time Inductive Load Storage Time Fall Time Inductive Load Storage Time Fall Time 10 5 - ton ts tf ts tf - 0.2 1.5 0.15 1.0 3.0 0.4 - 2.0 0.12 4.0 0.3 ts tf - 2.4 0.15 5.0 0.4 Notes : Pulse Test : Pulse width 300, Duty cycle 2% 2/5 SBL13003 Fig 1. Static Characteristics 3.0 2.7 2.4 IB = 500mA IB = 400mA IB = 250mA IB = 200mA IB = 150mA IB = 100mA IB = 50mA IB = 300mA 30 40 Fig 2. DC Current Gain IC, Collector Current [A] 1.8 1.5 1.2 0.9 0.6 0.3 0.0 0 1 2 3 4 hFE, DC Current Gain 2.1 TJ = 125 C o 20 TJ = 25 C o 10 Notes : VCE = 5V VCE = 1V IB = 0mA 5 0 0.01 0.1 1 VCE, Collector-Emitter Voltage [V] IC, Collector Current [A] Fig 3. Collector-Emitter Saturation Voltage 10 1.2 1.1 1 Fig 4. Base-Emitter Saturation Voltage VCE, Collector-Emitter Voltage [V] VBE, Base-Emitter Voltage [V] TJ = 125 C 0.1 o 1.0 TJ = 25 C 0.9 0.8 0.7 0.6 0.5 0.1 o TJ = 25 C 0.01 o TJ = 125 C Note : hFE = 5 o Note : hFE = 5 0.1 1 1 IC, Collector Current [A] IC, Collector Current [A] Fig 5. Resistive Load Fall Time 1000 10 Fig 6. Resistive Load Storage Time 100 Notes : VCC = 125V hFE = 5 IB1 = - IB2 tstg, Time [us] tf, Time [ns] TJ = 25 C o TJ = 25 C o Notes : VCC = 125V hFE = 5 IB1 = - IB2 1 0.0 0.3 0.6 0.9 1.2 1.5 1.8 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 IC, Collector Current [A] IC, Collector Current [A] 3/5 SBL13003 Fig 7. Safe Operation Areas 10 1 Fig 8. Reverse Biased Safe Operation Areas 1.6 IC, Collector Current [A] 10 -1 IC, Collector Current [A] 10 0 1.2 Notes : TJ 100 C IB1 = 1 A RBB = 0 LC = 0.35mH DC 0.8 VBE(off) = -9V 10 -2 0.4 -5V -3V -1.5V Single Pulse 10 -3 10 0 10 1 10 2 10 3 0.0 0 100 200 300 400 500 600 700 800 VCE, Collector-Emitter Clamp Voltage [V] VCE, Collector-Emitter Clamp Voltage [V] Fig 9. Power Derating Curve 125 Power Derating Factor (%) 100 75 50 25 0 0 50 100 150 o 200 TC, Case Temperature ( C) 4/5 SBL13003 Inductive Load Switching & RBSOA Test Circuit LC IB1 IC IB VCE D.U.T RBB VBE(off) VClamp VCC Resistive Load Switching Test Circuit RC IB1 IC IB VCE D.U.T RBB VBE(off) VCC 5/5 |
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